类别是'category.MOSFETs 晶体管阵列' (10000)
- 所有品牌
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | JESD-30代码 | 资历状况 | 配置 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 无卤素 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 连续放电电流(ID) | 阈值电压 | JEDEC-95代码 | 栅极至源极电压(Vgs) | 最大双电源电压 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 恢复时间 | 最大结点温度(Tj) | 场效应管特性 | 漏源电阻 | 最大rds | 栅源电压 | 反馈上限-最大值 (Crss) | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FDS8984-F085 | ON Semiconductor | 数据表 | 360000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 4 Weeks | ACTIVE (Last Updated: 1 week ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 230.4mg | SILICON | 2 | 42 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2001 | Automotive, AEC-Q101, PowerTrench® | yes | 活跃 | 1 (Unlimited) | 8 | 1.6W | 鸥翼 | Single | 增强型MOSFET | 1.6W | 5 ns | 2 N-Channel (Dual) | SWITCHING | 23m Ω @ 7A, 10V | 2.5V @ 250μA | 635pF @ 15V | 13nC @ 10V | 9ns | 30V | 21 ns | 7A | 20V | 7A | 30V | 30A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
NVJD4401NT1G | ON Semiconductor | 数据表 | 100 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 4 Weeks | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | 6 | 630mA | 2 | 786 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | EAR99 | Tin (Sn) | 270mW | 6 | Dual | 550mW | 83 ns | 2 N-Channel (Dual) | 375m Ω @ 630mA, 4.5V | 1.5V @ 250μA | 46pF @ 20V | 3nC @ 4.5V | 227ns | 506 ns | 910mA | 12V | 0.91A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IPG20N04S408ATMA1 | Infineon Technologies | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 8-PowerVDFN | YES | SILICON | 20A | 2 | -55°C~175°C TJ | Cut Tape (CT) | 2010 | OptiMOS™ | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | FLAT | 未说明 | not_compliant | 未说明 | R-PDSO-F8 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 65W | 2 N-Channel (Dual) | 7.6m Ω @ 17A, 10V | 4V @ 30μA | 2940pF @ 25V | 36nC @ 10V | 40V | 20A | 0.0076Ohm | 80A | 40V | 230 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN601DWK-7 | Diodes Incorporated | 数据表 | 24000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | Tin | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 6.010099mg | SILICON | 2 | -65°C~150°C TJ | Tape & Reel (TR) | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 2Ohm | LOW CAPACITANCE | 60V | 200mW | 鸥翼 | 260 | 305mA | 40 | DMN601DWK | 6 | AEC-Q101 | 2 | Dual | 增强型MOSFET | 200mW | 2 N-Channel (Dual) | SWITCHING | 2 Ω @ 500mA, 10V | 2.5V @ 1mA | 50pF @ 25V | 305mA | 1.6V | 20V | 0.305A | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.6 V | 5 pF | 1mm | 2.2mm | 1.35mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||
UM6K31NTN | ROHM Semiconductor | 数据表 | 35030 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | SILICON | 2 | 18 ns | 150°C TJ | Tape & Reel (TR) | 2007 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 150mW | 鸥翼 | 260 | 10 | 6 | 2 | 增强型MOSFET | 3.5 ns | 2 N-Channel (Dual) | SWITCHING | 2.4 Ω @ 250mA, 10V | 2.3V @ 1mA | 15pF @ 25V | 5ns | 60V | 28 ns | 250mA | 20V | 60V | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 2.5V Drive | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMC2990UDJ-7 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | SOT-963 | 6 | SILICON | 450mA 310mA | 2 | 31.1 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1999 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 350mW | DUAL | FLAT | DMC2990 | AEC-Q101 | 2 | 增强型MOSFET | 5.8 ns | N and P-Channel | SWITCHING | 990m Ω @ 100mA, 4.5V | 1V @ 250μA | 27.6pF @ 15V | 0.5nC @ 4.5V | 5.7ns | N-CHANNEL AND P-CHANNEL | 16.4 ns | 310mA | 8V | 0.31A | 0.99Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 450μm | 1.05mm | 850μm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||
![]() | DMN2004DWK-7 | Diodes Incorporated | 数据表 | 1055 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 6.010099mg | SILICON | 2 | 13.8 ns | -65°C~150°C TJ | Tape & Reel (TR) | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 550mOhm | Matte Tin (Sn) | HIGH RELIABILITY | 20V | 200mW | 鸥翼 | 260 | 540mA | 40 | DMN2004DWK | 6 | 不合格 | Dual | 增强型MOSFET | 200mW | 4.1 ns | 2 N-Channel (Dual) | SWITCHING | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | 150pF @ 16V | 540mA | 1V | 8V | 0.54A | 20V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.1mm | 2.2mm | 1.35mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||
FDMB3800N | ON Semiconductor | 数据表 | 9565 In Stock | - | 最小起订量: 1 最小包装量: 1 | 23 Weeks | ACTIVE (Last Updated: 4 days ago) | 表面贴装 | 表面贴装 | 8-PowerWDFN | 8 | 47mg | SILICON | 2 | 21 ns | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 40MOhm | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 1.6W | Dual | 增强型MOSFET | 1.6W | 8 ns | 750mW | 2 N-Channel (Dual) | SWITCHING | 40m Ω @ 4.8A, 10V | 3V @ 250μA | 465pF @ 15V | 5.6nC @ 5V | 5ns | 30V | 5 ns | 4.8A | 1.9V | 20V | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.9 V | 60 pF | 750μm | 3mm | 1.9mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
FDMS3600S | ON Semiconductor | 数据表 | 157 In Stock | - | 最小起订量: 1 最小包装量: 1 | 13 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 8 | 171mg | 2 | 38 ns | Tape & Reel (TR) | e3 | yes | 活跃 | 1 (Unlimited) | 7 | EAR99 | Tin (Sn) | 150°C | -55°C | 1W | QUAD | R-PQFP-N7 | Dual | 增强型MOSFET | 2.5W | 排水源头 | SWITCHING | 5.3ns | 25V | N-CHANNEL | 3.9 ns | 30A | 20V | 15A | 25V | 1.68nF | METAL-OXIDE SEMICONDUCTOR | 1.6mOhm | 5.6 mΩ | 1.8 V | 90 pF | 1.05mm | 5mm | 6mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
FDPC8012S | ON Semiconductor | 数据表 | 13856 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | 表面贴装 | 8-PowerWDFN | 8 | 192mg | SILICON | 13A 26A | 2 | 34 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | 2W | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 800mW 900mW | 2 N-Channel (Dual) Asymmetrical | SWITCHING | 7m Ω @ 12A, 4.5V | 2.2V @ 250μA | 1075pF @ 13V | 8nC @ 4.5V | 3ns | 3 ns | 88A | MO-240BA | 12V | 13A | 0.007Ohm | 25V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 725μm | 3.3mm | 3.3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||
EM6M2T2R | ROHM Semiconductor | 数据表 | 104000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 6 | SILICON | 2 | 150°C TJ | Tape & Reel (TR) | 2009 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 150mW | DUAL | FLAT | 260 | 10 | *M2 | 6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 150mW | N and P-Channel | SWITCHING | 1 Ω @ 200mA, 4V | 1V @ 1mA | 25pF @ 10V | 20V | N-CHANNEL AND P-CHANNEL | 200mA | 0.2A | 1.4Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PMGD290UCEAX | Nexperia USA Inc. | 数据表 | 6000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 4 Weeks | Tin | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 725mA 500mA | 80 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | 活跃 | 1 (Unlimited) | 280mW | 6 | 2 | Dual | 18 ns | N and P-Channel | 380m Ω @ 500mA, 4.5V | 1.3V @ 250μA | 83pF @ 10V | 0.68nC @ 4.5V | 30ns | 72 ns | 500mA | 8V | 20V | 逻辑电平门 | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTMFD5C674NLT1G | ON Semiconductor | 数据表 | 34434 In Stock | - | 最小起订量: 1 最小包装量: 1 | 48 Weeks | ACTIVE (Last Updated: 5 days ago) | 表面贴装 | 8-PowerTDFN | 11A Ta 42A Tc | -55°C~175°C TJ | Tape & Reel (TR) | e3 | yes | 活跃 | 1 (Unlimited) | Tin (Sn) | 未说明 | 未说明 | 3W Ta 37W Tc | 2 N-Channel (Dual) | 14.4m Ω @ 10A, 10V | 2.2V @ 25μA | 640pF @ 25V | 10nC @ 10V | 60V | Standard | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTUD3169CZT5G | ON Semiconductor | 数据表 | 54513 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 8 Weeks | ACTIVE (Last Updated: 5 days ago) | Tin | 表面贴装 | SOT-963 | YES | 6 | SILICON | 220mA 200mA | 2 | 196 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 710mW | FLAT | NTUD3169CZ | 6 | Dual | 增强型MOSFET | 200mW | 26 ns | 125mW | N and P-Channel | SWITCHING | 1.5 Ω @ 100mA, 4.5V | 1V @ 250μA | 12.5pF @ 15V | 46ns | N-CHANNEL AND P-CHANNEL | 145 ns | 280mA | 1V | 8V | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 400μm | 1.05mm | 850μm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
![]() | DMN2215UDM-7 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 19 Weeks | Tin | 表面贴装 | 表面贴装 | SOT-23-6 | 6 | SILICON | 2 | 19.6 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | HIGH RELIABILITY | 650mW | 鸥翼 | 260 | 40 | DMN2215UDM | 6 | 不合格 | Dual | 增强型MOSFET | 650mW | 8 ns | 2 N-Channel (Dual) | SWITCHING | 100m Ω @ 2.5A, 4.5V | 1V @ 250μA | 188pF @ 10V | 3.8ns | 20V | 3.8 ns | 2A | 12V | 2A | 0.1Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.1mm | 3mm | 1.6mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||
![]() | IRF9956PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 13 ns | -55°C~150°C TJ | Tube | 2003 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | EAR99 | 100mOhm | AVALANCHE RATED, HIGH RELIABILITY | 30V | 2W | 鸥翼 | 3.5A | IRF9956PBF | Dual | 增强型MOSFET | 2W | 6.2 ns | 2 N-Channel (Dual) | SWITCHING | 100m Ω @ 2.2A, 10V | 1V @ 250μA | 190pF @ 15V | 14nC @ 10V | 8.8ns | 3 ns | 3.5A | 1V | 20V | 30V | 16A | 44 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1 V | 1.5mm | 5mm | 4.05mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
![]() | DMC4015SSD-13 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 23 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 8.6A 6.2A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 1.2W | DUAL | 鸥翼 | 未说明 | 未说明 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | N and P-Channel | SWITCHING | 15m Ω @ 3A, 10V | 3V @ 250μA | 1810pF @ 20V | 40nC @ 10V | 40V | N-CHANNEL AND P-CHANNEL | 6.2A | 0.02Ohm | 40V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN32D2LDF-7 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 5-TSSOP, SC-70-5, SOT-353 | 5 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 280mW | 鸥翼 | 260 | 40 | 5 | 2 | 增强型MOSFET | 2 N-Channel (Dual) Common Source | SWITCHING | 1.2 Ω @ 100mA, 4V | 1.2V @ 250μA | 39pF @ 3V | 30V | 400mA | 10V | 0.4A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1mm | 2.2mm | 1.35mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||
FDMS9620S | ON Semiconductor | 数据表 | 1528 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | ACTIVE (Last Updated: 4 days ago) | 表面贴装 | 表面贴装 | 8-PowerWDFN | 8 | 228mg | SILICON | 7.5A 10A | 2 | 27 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 32MOhm | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 2.5W | Dual | 增强型MOSFET | 2.5W | DRAIN | 1W | 2 N-Channel (Dual) | SWITCHING | 21.5m Ω @ 7.5A, 10V | 3V @ 250μA | 665pF @ 15V | 14nC @ 10V | 13ns | 7 ns | 10A | 1.6V | 20V | 7.5A | 30V | 60A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 750μm | 5mm | 6mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||
![]() | 2N7002PV,115 | Nexperia USA Inc. | 数据表 | 92000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 4 Weeks | Tin | 表面贴装 | SOT-563, SOT-666 | YES | 6 | SILICON | 2 | 10 ns | 150°C TJ | Tape & Reel (TR) | 2010 | e3 | 活跃 | 1 (Unlimited) | 6 | 逻辑电平兼容 | 330mW | FLAT | 6 | 增强型MOSFET | 390mW | 3 ns | 330mW | 2 N-Channel (Dual) | SWITCHING | 1.6 Ω @ 500mA, 10V | 2.4V @ 250μA | 50pF @ 10V | 0.8nC @ 4.5V | 4ns | 5 ns | 350mA | 20V | 60V | 0.35A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF9362PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 8A | 2 | 115 ns | -55°C~150°C TJ | Tube | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | EAR99 | 2W | 鸥翼 | IRF9362PBF | Dual | 增强型MOSFET | 2W | 5.2 ns | 2 P-Channel (Dual) | SWITCHING | 21m Ω @ 8A, 10V | 2.4V @ 25μA | 1300pF @ 25V | 39nC @ 10V | 5.9ns | 30V | 53 ns | -8A | -1.8V | 20V | 8A | -30V | 64A | 94 mJ | METAL-OXIDE SEMICONDUCTOR | 48 ns | 逻辑电平门 | -1.8 V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||
MMDF1N05ER2G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | OBSOLETE (Last Updated: 1 day ago) | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | SILICON | 2 | 40 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | e3 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 300MOhm | Tin (Sn) | 逻辑电平兼容 | 50V | 2W | 鸥翼 | 260 | 1A | 40 | MMDF1N05E | 8 | Dual | 增强型MOSFET | 2W | 20 ns | 2 N-Channel (Dual) | SWITCHING | 300m Ω @ 1.5A, 10V | 3V @ 250μA | 330pF @ 25V | 12.5nC @ 10V | 30ns | 25 ns | 2A | 3V | 20V | 2A | 50V | 10A | 300 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5mm | 4mm | 无 | 无SVHC | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||
FDS8935 | ON Semiconductor | 数据表 | 2500 In Stock | - | 最小起订量: 1 最小包装量: 1 | 11 Weeks | ACTIVE (Last Updated: 6 days ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 2 | 22 ns | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 3.1W | 鸥翼 | Dual | 增强型MOSFET | 3.1W | 5 ns | 1.6W | 2 P-Channel (Dual) | SWITCHING | 183m Ω @ 2.1A, 10V | 3V @ 250μA | 879pF @ 40V | 19nC @ 10V | 3ns | 80V | 3 ns | 2.1A | -1.8V | 20V | -80V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | -1.8 V | 36 pF | 1.5mm | 4mm | 5mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||
FDC6506P | ON Semiconductor | 数据表 | 12500 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 36mg | SILICON | 2 | 14 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1999 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 170MOhm | 逻辑电平兼容 | -30V | 960mW | 鸥翼 | -1.8A | 2 | Dual | 增强型MOSFET | 960mW | 7 ns | 700mW | 2 P-Channel (Dual) | SWITCHING | 170m Ω @ 1.8A, 10V | 3V @ 250μA | 190pF @ 15V | 3.5nC @ 10V | 8ns | 8 ns | 1.8A | -1.8V | 20V | -30V | 30V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.1mm | 3mm | 1.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||
NVMFD5877NLWFT1G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 13 Weeks | ACTIVE, NOT REC (Last Updated: 4 days ago) | Tin | 表面贴装 | 8-PowerTDFN | YES | 8 | SILICON | 6A | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | e3 | yes | 不用于新设计 | 1 (Unlimited) | 6 | EAR99 | 3.2W | FLAT | 8 | AEC-Q101 | R-PDSO-F6 | Dual | 增强型MOSFET | 3.2W | DRAIN | 2 N-Channel (Dual) | 39m Ω @ 7.5A, 10V | 3V @ 250μA | 无卤素 | 540pF @ 25V | 20nC @ 10V | 60V | 17A | 20V | 6A | 0.06Ohm | 74A | 60V | 40 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 |
FDS8984-F085
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
4.431975
NVJD4401NT1G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
3.989773
IPG20N04S408ATMA1
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
13.870534
DMN601DWK-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
2.605093
UM6K31NTN
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
0.716687
DMC2990UDJ-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
DMN2004DWK-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
0.713213
FDMB3800N
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
FDMS3600S
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
FDPC8012S
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
38.175598
EM6M2T2R
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
PMGD290UCEAX
Nexperia USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
NTMFD5C674NLT1G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
NTUD3169CZT5G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
1.486386
DMN2215UDM-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
IRF9956PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
DMC4015SSD-13
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
DMN32D2LDF-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
FDMS9620S
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
2N7002PV,115
Nexperia USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
IRF9362PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
MMDF1N05ER2G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
FDS8935
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
FDC6506P
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
NVMFD5877NLWFT1G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
